Alternate color or configuration shown Transcend MTE662T2 M.2 1000 GB PCI Express 3.0 3D NAND NVMe Transcend MTE662T2. SSD capacity: 1000 GB, SSD form factor: M.2, Read speed: 3500 MB/s, Write speed: 2700 MB/s, Component for: PC/notebook Manufacturer: Transcend SKU: 6626447 Manufacturer part number: TS1TMTE662T2 GTIN: 0760557844617 Price: $554.70 Qty: Add to cart Custom wishlist OK Add to wishlist Add to compare list Email a friend Transcend's MTE662T2 M.2 SSD features the PCI Express (PCIe) Gen 3 x4 interface and is compatible with NVM Express (NVMe) 1.3 specifications to achieve never-before-seen transfer speeds. The MTE662T2 features state-of-the-art 3D NAND technology, which allows 96 layers of 3D NAND flash chips to be vertically stacked. Compared to 3D NAND at 64 layers, this density breakthrough greatly improves storage efficiency, and its built-in DRAM cache allows faster access. Applied with 30µ" gold finger PCB and Corner Bond technology, the MTE662T2 is fully tested in-house to guarantee reliability in mission-critical applications, boasting an endurance rating of 3K Program/Erase cycles and an extended operating temperature ranging from -20℃~75℃. DRAM Cache embedded30µ" PCB gold fingerEndurance: 3K P/E cycles (Program/Erase cycles) guaranteedPCIe Gen 3 x4 interfaceKey components fortified by default with Corner Bond technologyCompliant with PCI Express specification 3.1Compliant with NVM Express specification 1.3Supports NVM commandSLC caching technologyBuilt-in LDPC ECC (Error Correction Code) functionality Overview Specifications Contact Us Transcend's MTE662T2 M.2 SSD features the PCI Express (PCIe) Gen 3 x4 interface and is compatible with NVM Express (NVMe) 1.3 specifications to achieve never-before-seen transfer speeds. The MTE662T2 features state-of-the-art 3D NAND technology, which allows 96 layers of 3D NAND flash chips to be vertically stacked. Compared to 3D NAND at 64 layers, this density breakthrough greatly improves storage efficiency, and its built-in DRAM cache allows faster access. Applied with 30µ" gold finger PCB and Corner Bond technology, the MTE662T2 is fully tested in-house to guarantee reliability in mission-critical applications, boasting an endurance rating of 3K Program/Erase cycles and an extended operating temperature ranging from -20℃~75℃. DRAM Cache embedded30µ" PCB gold fingerEndurance: 3K P/E cycles (Program/Erase cycles) guaranteedPCIe Gen 3 x4 interfaceKey components fortified by default with Corner Bond technologyCompliant with PCI Express specification 3.1Compliant with NVM Express specification 1.3Supports NVM commandSLC caching technologyBuilt-in LDPC ECC (Error Correction Code) functionality Products specifications Attribute name Attribute value TBW rating 4400 Width 3.15" Depth 0.866" Height 0.141" Weight 0.317 oz PCI Express interface data lanes x4 NVMe version 1.3 Technical details Sustainability certificates RoHS Ports & interfaces Interface PCI Express 3.0 Design Certification CE, FCC, BSMI Operational conditions Minimum operating temperature -20 °C Maximum operating temperature 75 °C Operating temperature (T-T) -20 - 75 °C Storage temperature (T-T) -55 - 85 °C Operating shock 1500 G Operating vibration 20 G Power Power consumption (sleep) 1 W Operating voltage 3.3 V Features Random read (4KB) 340000 IOPS Random write (4KB) 355000 IOPS Component for PC/notebook ECC Y Mean time between failures (MTBF) 3000000 h SSD capacity 1000 GB Memory type 3D NAND Read speed 3500 MB/s Write speed 2700 MB/s NVMe Y SSD form factor M.2 Product tags (51242)