Samsung 983 ZET Half-Height/Half-Length (HH/HL) 960 GB PCI Express 3.0 V-NAND

Samsung 983 ZET. SSD capacity: 960 GB, SSD form factor: Half-Height/Half-Length (HH/HL)
Manufacturer: Samsung
SKU: 5744516
Manufacturer part number: MZ-PZA960BW
NVMe Enterprise SSD for Business Bridging the gap between enterprise storage and cache memory with ultra-low latency.
At a Glance The 983 ZET bridges the gap between storage memory and cache memory by offering a new level of performance with ultra-low latency, high QoS, breakthrough speeds and ultra-high reliability. Ideal for high-performance computing applications such as hybrid caching servers, database servers, AI and IoT, the 983 ZET is a perfect companion to Samsung’s DCT SSDs as a powerful cache memory solution to completely enhance server performance.
Ultra-Low Latency and Non-Volatile Memory Express (NVMe) Samsung’s advanced low-latency V-NAND technology combined with the NVMe interface enables sequential read/write speeds of up to 3,400/3,000 MB/s, random read/write speeds of up to 750K/60K IOPS, and low latency of up to 15 μs (microseconds).
V-NAND Technology Samsung's V-NAND flash memory helps to overcome the limitations of conventional planar NAND architecture. It stacks 64 cell layers vertically over one another rather than trying to fit itself onto a fixed horizontal space, in order to provide high density and performance with a small footprint.
High Quality of Service (QoS) Designed for server applications, the 983 ZET offers a high Quality of Service (QoS) for a consistent, predictable latency and IOPS.
Power-Loss Protection Protect data integrity from unexpected power loss with Samsung's advanced power-loss protection architecture. Using the electricity from a tantalum capacitor to provide enough time to transfer the cached data in the DRAM to the flash memory, you can be assured no loss of data.
End-to-End Data Protection Secure data without performance degradation thanks to end-to-end data protection.
Efficient Power Management Thanks to low power consumption, you can enhance efficiency for operations and maintenance.
S.M.A.R.T. Monitor the computer drives proactively to detect and report various reliability indicators with Self-Monitoring, Analysis and Reporting Technology (S.M.A.R.T).
Dynamic Thermal Guard Protection Safeguard the SSD from overheating by automatically controlling the speed of the CPU relative to its core temperature, by throttling back the performance to prevent thermal shutdown.
Samsung Components Samsung's solid state drives are built entirely from Samsung components, leveraging our extensive OEM expertise to allow complete, optimized integration.

 

  • Ultra-low latency at 15 microseconds, over five times less latency compared to our 983 DCT SSDs
  • NVMe (Non-Volatile Memory Express) interface delivers blazing fast speed, with 2 times faster random read performance compared to our 983 DCT SSDs
  • End-to-end data protection to help ensure consistency over the entire data transfer path
NVMe Enterprise SSD for Business Bridging the gap between enterprise storage and cache memory with ultra-low latency.
At a Glance The 983 ZET bridges the gap between storage memory and cache memory by offering a new level of performance with ultra-low latency, high QoS, breakthrough speeds and ultra-high reliability. Ideal for high-performance computing applications such as hybrid caching servers, database servers, AI and IoT, the 983 ZET is a perfect companion to Samsung’s DCT SSDs as a powerful cache memory solution to completely enhance server performance.
Ultra-Low Latency and Non-Volatile Memory Express (NVMe) Samsung’s advanced low-latency V-NAND technology combined with the NVMe interface enables sequential read/write speeds of up to 3,400/3,000 MB/s, random read/write speeds of up to 750K/60K IOPS, and low latency of up to 15 μs (microseconds).
V-NAND Technology Samsung's V-NAND flash memory helps to overcome the limitations of conventional planar NAND architecture. It stacks 64 cell layers vertically over one another rather than trying to fit itself onto a fixed horizontal space, in order to provide high density and performance with a small footprint.
High Quality of Service (QoS) Designed for server applications, the 983 ZET offers a high Quality of Service (QoS) for a consistent, predictable latency and IOPS.
Power-Loss Protection Protect data integrity from unexpected power loss with Samsung's advanced power-loss protection architecture. Using the electricity from a tantalum capacitor to provide enough time to transfer the cached data in the DRAM to the flash memory, you can be assured no loss of data.
End-to-End Data Protection Secure data without performance degradation thanks to end-to-end data protection.
Efficient Power Management Thanks to low power consumption, you can enhance efficiency for operations and maintenance.
S.M.A.R.T. Monitor the computer drives proactively to detect and report various reliability indicators with Self-Monitoring, Analysis and Reporting Technology (S.M.A.R.T).
Dynamic Thermal Guard Protection Safeguard the SSD from overheating by automatically controlling the speed of the CPU relative to its core temperature, by throttling back the performance to prevent thermal shutdown.
Samsung Components Samsung's solid state drives are built entirely from Samsung components, leveraging our extensive OEM expertise to allow complete, optimized integration.

 

  • Ultra-low latency at 15 microseconds, over five times less latency compared to our 983 DCT SSDs
  • NVMe (Non-Volatile Memory Express) interface delivers blazing fast speed, with 2 times faster random read performance compared to our 983 DCT SSDs
  • End-to-end data protection to help ensure consistency over the entire data transfer path
Products specifications
Attribute nameAttribute value
Sequential read speed (ATTO)3400 MB/s
Sequential write speed (ATTO)3000 MB/s
Width6.6"
Depth0.74"
Height2.75"
Weight11.6 oz
Controller typeSamsung Phoenix
Active garbage collectionY
TCG Opal 2.0Y
Ports & interfaces
InterfacePCI Express 3.0
Operational conditions
Operating temperature (T-T)0 - 55 °C
Storage temperature (T-T)-40 - 85 °C
Storage relative humidity (H-H)5 - 95 %
Operating shock1500 G
Power
Power consumption (idle)5.5 W
Operating voltage12 V
Power consumption (write)9 W
Features
Mean time between failures (MTBF)2000000 h
SSD capacity960 GB
Memory typeV-NAND
S.M.A.R.T. supportY
TRIM supportY
SSD form factorHalf-Height/Half-Length (HH/HL)
Product tags
  • (56199)